1985 Spring Meeting: Final Program and Abstracts, Materials Research Society 1985 Spring Meeting, April 15-18 Golden Gateway Holiday Inn, San Francisco, California |
From inside the book
Results 1-3 of 66
Page 20
... electrical properties are altered . Large energy deposition rates can lead to the reduction of the oxide , thus decreas- ing visible transmission . Thermal annealing in air resulted in the recovery of optical and electrical properties ...
... electrical properties are altered . Large energy deposition rates can lead to the reduction of the oxide , thus decreas- ing visible transmission . Thermal annealing in air resulted in the recovery of optical and electrical properties ...
Page 28
... Electrical Engineering and Computer Science , University of California , Berkeley , CA 94720 Ion - beam mixing is used to improve the diffusion of a deposited GeSe film into undoped , semi - insulating GaAs substrates . Codiffusants ...
... Electrical Engineering and Computer Science , University of California , Berkeley , CA 94720 Ion - beam mixing is used to improve the diffusion of a deposited GeSe film into undoped , semi - insulating GaAs substrates . Codiffusants ...
Page 63
... ELECTRICAL MEASUREMENTS ON CZ GROWN WAFERS , J. Whitfield and R. Boyle , Motorola Semiconductor Research and Development Laboratories , Phoenix , Arizona 85008 . Spatial variations of the interstitial oxygen ( [ 0 ] ) and substitutional ...
... ELECTRICAL MEASUREMENTS ON CZ GROWN WAFERS , J. Whitfield and R. Boyle , Motorola Semiconductor Research and Development Laboratories , Phoenix , Arizona 85008 . Spatial variations of the interstitial oxygen ( [ 0 ] ) and substitutional ...
Contents
Microscopic Identification of Electronic | 37 |
Thin Films The Relationship of Structure | 79 |
Symposium | 103 |
5 other sections not shown
Common terms and phrases
a-Si absorption alloy amorphous silicon analysis applications April 16 AT&T Bell Laboratories atoms Auger band gap Berkeley carrier characterization chemical composition concentration crystal crystalline deep levels defects density deposition depth profiling determined developed devices diffraction diffusion discussed disk donor dopant doped dose effects electrical electron microscopy energy epitaxial etching experimental formation function GaAs grain hydrogen impurities interface investigated Invited talk ion beam ion implantation Japan laser layers magnetic Materials Research measurements metal microstructure Murray Hill National Laboratory nitride observed obtained optical oxide oxygen Palo Alto parameters photoconductivity Physics polymer properties rapid thermal annealing Research Center Research Laboratory resonance Rutherford backscattering samples Sandia National Laboratories scanning Schottky secondary ion semiconductors SESSION silicide SIMS soft x-ray solar cells spectra spectrometry spectroscopy sputtering Stanford structure substrate surface synchrotron radiation technique Technology temperature thickness thin films transmission electron microscopy wafers Yorktown Heights