1985 Spring Meeting: Final Program and Abstracts, Materials Research Society 1985 Spring Meeting, April 15-18 Golden Gateway Holiday Inn, San Francisco, California |
From inside the book
Results 1-3 of 19
Page 11
... etching has a low etching rate and use of ion beam induced chemical enhancement effect is crucial to improve etching rate . Such chemical effect also provides a mean for selective film deposition of submicron pattern . In the present ...
... etching has a low etching rate and use of ion beam induced chemical enhancement effect is crucial to improve etching rate . Such chemical effect also provides a mean for selective film deposition of submicron pattern . In the present ...
Page 90
... etching reveals surface defects consisting of uniformly distributed conical shaped etch pit structures with a lateral to vertical etch ratio of 3 to 1. A correlation has been made between film structure and single crystal zinc oxide ...
... etching reveals surface defects consisting of uniformly distributed conical shaped etch pit structures with a lateral to vertical etch ratio of 3 to 1. A correlation has been made between film structure and single crystal zinc oxide ...
Page 107
... etch mask . Reactive ion etching and reactive ion beam etching is used to selectively etch only the oxide layer . This results in very good uniformity of the pit depth . Light diffraction and electron microscopy , as well as visual ...
... etch mask . Reactive ion etching and reactive ion beam etching is used to selectively etch only the oxide layer . This results in very good uniformity of the pit depth . Light diffraction and electron microscopy , as well as visual ...
Contents
Microscopic Identification of Electronic | 37 |
Thin Films The Relationship of Structure | 79 |
Symposium | 103 |
5 other sections not shown
Common terms and phrases
a-Si absorption alloy amorphous silicon analysis applications April 16 AT&T Bell Laboratories atoms Auger band gap Berkeley carrier characterization chemical composition concentration crystal crystalline deep levels defects density deposition depth profiling determined developed devices diffraction diffusion discussed disk donor dopant doped dose effects electrical electron microscopy energy epitaxial etching experimental formation function GaAs grain hydrogen impurities interface investigated Invited talk ion beam ion implantation Japan laser layers magnetic Materials Research measurements metal microstructure Murray Hill National Laboratory nitride observed obtained optical oxide oxygen Palo Alto parameters photoconductivity Physics polymer properties rapid thermal annealing Research Center Research Laboratory resonance Rutherford backscattering samples Sandia National Laboratories scanning Schottky secondary ion semiconductors SESSION silicide SIMS soft x-ray solar cells spectra spectrometry spectroscopy sputtering Stanford structure substrate surface synchrotron radiation technique Technology temperature thickness thin films transmission electron microscopy wafers Yorktown Heights