1985 Spring Meeting: Final Program and Abstracts, Materials Research Society 1985 Spring Meeting, April 15-18 Golden Gateway Holiday Inn, San Francisco, California |
From inside the book
Results 1-3 of 73
Page 47
... experimental results . In light of these new calculations , we will discuss : ( i ) the magnetism of these impurities , ( ii ) comparison with DLTS , EPR and ENDOR data , ( iii ) the chemical trends in the level arrangement and in their ...
... experimental results . In light of these new calculations , we will discuss : ( i ) the magnetism of these impurities , ( ii ) comparison with DLTS , EPR and ENDOR data , ( iii ) the chemical trends in the level arrangement and in their ...
Page 54
... experiment . BP.2 ELECTRONIC STRUCTURE CALCULATION OF 3D - TRANSITION METAL POINT DEFECTS IN SILICON . F. Beeler , O.K. ... experimental observed transitions and trends are reproduced . For interstitial V and Ti we show that the model of ...
... experiment . BP.2 ELECTRONIC STRUCTURE CALCULATION OF 3D - TRANSITION METAL POINT DEFECTS IN SILICON . F. Beeler , O.K. ... experimental observed transitions and trends are reproduced . For interstitial V and Ti we show that the model of ...
Page 187
... experimental curves are compared with the numerically stimulated characteristics using the Finite Element Device Analysis Program ( FIELDAY ) in which thermionic emission - diffusion boundary conditions are used for both electrons and ...
... experimental curves are compared with the numerically stimulated characteristics using the Finite Element Device Analysis Program ( FIELDAY ) in which thermionic emission - diffusion boundary conditions are used for both electrons and ...
Contents
Microscopic Identification of Electronic | 37 |
Thin Films The Relationship of Structure | 79 |
Symposium | 103 |
5 other sections not shown
Common terms and phrases
a-Si absorption alloy amorphous silicon analysis applications April 16 AT&T Bell Laboratories atoms Auger band gap Berkeley carrier characterization chemical composition concentration crystal crystalline deep levels defects density deposition depth profiling determined developed devices diffraction diffusion discussed disk donor dopant doped dose effects electrical electron microscopy energy epitaxial etching experimental formation function GaAs grain hydrogen impurities interface investigated Invited talk ion beam ion implantation Japan laser layers magnetic Materials Research measurements metal microstructure Murray Hill National Laboratory nitride observed obtained optical oxide oxygen Palo Alto parameters photoconductivity Physics polymer properties rapid thermal annealing Research Center Research Laboratory resonance Rutherford backscattering samples Sandia National Laboratories scanning Schottky secondary ion semiconductors SESSION silicide SIMS soft x-ray solar cells spectra spectrometry spectroscopy sputtering Stanford structure substrate surface synchrotron radiation technique Technology temperature thickness thin films transmission electron microscopy wafers Yorktown Heights