1985 Spring Meeting: Final Program and Abstracts, Materials Research Society 1985 Spring Meeting, April 15-18 Golden Gateway Holiday Inn, San Francisco, California |
From inside the book
Results 1-3 of 86
Page 63
... measurements to map [ 0 ] and [ C ] in silicon wafers for correlation with wafer electrical measurements . The new infrared mapping method uses a spectrometer fitted with a software controllable wafer positioner . 100 mm diameter wafers ...
... measurements to map [ 0 ] and [ C ] in silicon wafers for correlation with wafer electrical measurements . The new infrared mapping method uses a spectrometer fitted with a software controllable wafer positioner . 100 mm diameter wafers ...
Page 97
... measuring techniques in identifying the transition temperature . For silicon it occurs at a substrate temperature of ... measurements and their tempera- ture dependence fitted variable range hopping models . Hardnesses were > 7 Mohs ...
... measuring techniques in identifying the transition temperature . For silicon it occurs at a substrate temperature of ... measurements and their tempera- ture dependence fitted variable range hopping models . Hardnesses were > 7 Mohs ...
Page 202
... measured with resolving powers as high as 50 and reflectivities , up to 20 % being recorded . These measurements , were made using synchrotron radiation from the SSRC soft x - ray beam lines . We will review our measurements and discuss ...
... measured with resolving powers as high as 50 and reflectivities , up to 20 % being recorded . These measurements , were made using synchrotron radiation from the SSRC soft x - ray beam lines . We will review our measurements and discuss ...
Contents
Microscopic Identification of Electronic | 37 |
Thin Films The Relationship of Structure | 79 |
Symposium | 103 |
5 other sections not shown
Common terms and phrases
a-Si absorption alloy amorphous silicon analysis applications April 16 AT&T Bell Laboratories atoms Auger band gap Berkeley carrier characterization chemical composition concentration crystal crystalline deep levels defects density deposition depth profiling determined developed devices diffraction diffusion discussed disk donor dopant doped dose effects electrical electron microscopy energy epitaxial etching experimental formation function GaAs grain hydrogen impurities interface investigated Invited talk ion beam ion implantation Japan laser layers magnetic Materials Research measurements metal microstructure Murray Hill National Laboratory nitride observed obtained optical oxide oxygen Palo Alto parameters photoconductivity Physics polymer properties rapid thermal annealing Research Center Research Laboratory resonance Rutherford backscattering samples Sandia National Laboratories scanning Schottky secondary ion semiconductors SESSION silicide SIMS soft x-ray solar cells spectra spectrometry spectroscopy sputtering Stanford structure substrate surface synchrotron radiation technique Technology temperature thickness thin films transmission electron microscopy wafers Yorktown Heights