1985 Spring Meeting: Final Program and Abstracts, Materials Research Society 1985 Spring Meeting, April 15-18 Golden Gateway Holiday Inn, San Francisco, California |
From inside the book
Results 1-3 of 38
Page 14
... thickness Xox , impurity redistributions , etc. ) are outlined in detail . = = The implant step was performed through a thermally - grown silicon dioxide ( SiO2 ) mask of variable thickness ( Xox 100-1200 A ) at energies ranging from E ...
... thickness Xox , impurity redistributions , etc. ) are outlined in detail . = = The implant step was performed through a thermally - grown silicon dioxide ( SiO2 ) mask of variable thickness ( Xox 100-1200 A ) at energies ranging from E ...
Page 133
... THICKNESS EFFECT ON THE MICROSTRUCTURE OF SPUTTERED FILMS STUDIED BY A NEW X - RAY DIFFRACTION METHOD . M. HECO ... thickness thin films have been studied . The effective particle size ( Dev ) increases with an increasing of the thin ...
... THICKNESS EFFECT ON THE MICROSTRUCTURE OF SPUTTERED FILMS STUDIED BY A NEW X - RAY DIFFRACTION METHOD . M. HECO ... thickness thin films have been studied . The effective particle size ( Dev ) increases with an increasing of the thin ...
Page 141
... thickness . The plots are straight lines practically parallel with the abscissa , however , their vertical position along the y axis depends on the film thickness . This fact permits the simultaneous determination of the thickness and ...
... thickness . The plots are straight lines practically parallel with the abscissa , however , their vertical position along the y axis depends on the film thickness . This fact permits the simultaneous determination of the thickness and ...
Contents
Microscopic Identification of Electronic | 37 |
Thin Films The Relationship of Structure | 79 |
Symposium | 103 |
5 other sections not shown
Common terms and phrases
a-Si absorption alloy amorphous silicon analysis applications April 16 AT&T Bell Laboratories atoms Auger band gap Berkeley carrier characterization chemical composition concentration crystal crystalline deep levels defects density deposition depth profiling determined developed devices diffraction diffusion discussed disk donor dopant doped dose effects electrical electron microscopy energy epitaxial etching experimental formation function GaAs grain hydrogen impurities interface investigated Invited talk ion beam ion implantation Japan laser layers magnetic Materials Research measurements metal microstructure Murray Hill National Laboratory nitride observed obtained optical oxide oxygen Palo Alto parameters photoconductivity Physics polymer properties rapid thermal annealing Research Center Research Laboratory resonance Rutherford backscattering samples Sandia National Laboratories scanning Schottky secondary ion semiconductors SESSION silicide SIMS soft x-ray solar cells spectra spectrometry spectroscopy sputtering Stanford structure substrate surface synchrotron radiation technique Technology temperature thickness thin films transmission electron microscopy wafers Yorktown Heights