Thin Film ProcessesRemarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 95
... argon: 0, 10 mTorr; O, 0.5 mTorr. with pressure (more collision targets to make ionization). At a fixed voltage and pressure the current increases with the magnetic field strength (higher 6,). With proper choice of magnetic field ...
... argon: 0, 10 mTorr; O, 0.5 mTorr. with pressure (more collision targets to make ionization). At a fixed voltage and pressure the current increases with the magnetic field strength (higher 6,). With proper choice of magnetic field ...
Page 96
... argon; A, current. I A. argon: 0. current, I A. oxygen. TOP iTw—r DISCHARGE 4 E EXTINGUISHES MAGNETIC FIELD STRENGTH (GI. Fig. 12. Current—voltage data for magnetron mode operation of cylindrical-post and cylindrical-hollow magnetron ...
... argon; A, current. I A. argon: 0. current, I A. oxygen. TOP iTw—r DISCHARGE 4 E EXTINGUISHES MAGNETIC FIELD STRENGTH (GI. Fig. 12. Current—voltage data for magnetron mode operation of cylindrical-post and cylindrical-hollow magnetron ...
Page 97
... argon: current density, 10 mA/cmz. Figure 13 shows that operation at the low pressure limit is surprisingly independent of the gas species (compare argon and oxygen data). This behavior is attributed to the role of plasma oscillations ...
... argon: current density, 10 mA/cmz. Figure 13 shows that operation at the low pressure limit is surprisingly independent of the gas species (compare argon and oxygen data). This behavior is attributed to the role of plasma oscillations ...
Page 104
... Argon pressure, 25 mTorr; current 8 A: voltage, 830 V; magnetic field, 65 G; and substrate radius, 40 cm. / VIRTUAL ,' ANODE \/ I I I ~- ,"' SCATTERING ANGLE larly important in cylindrical-post magnetrons because atoms undergoing ...
... Argon pressure, 25 mTorr; current 8 A: voltage, 830 V; magnetic field, 65 G; and substrate radius, 40 cm. / VIRTUAL ,' ANODE \/ I I I ~- ,"' SCATTERING ANGLE larly important in cylindrical-post magnetrons because atoms undergoing ...
Page 105
... argon working pressure on the structure of metal coatings [105]. The diagram was formulated from thick coating data accumulated using both cylindrical-post and cylindrical-hollow magnetron sources [106]. Zone 1 is associated with ...
... argon working pressure on the structure of metal coatings [105]. The diagram was formulated from thick coating data accumulated using both cylindrical-post and cylindrical-hollow magnetron sources [106]. Zone 1 is associated with ...
Contents
9 | |
Chemical Methods of Film Deposition | 207 |
Physicalchemical Methods of Film Deposition | 333 |
Etching Processes | 399 |
Index | 557 |
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Common terms and phrases
A/min Abstr alloys anode Appl argon atoms cathode Chem chemical Chemical vapor deposition coatings composition compounds configuration current density deposition rate effect efficiency electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition first flow rate flux GaAs gas flow gases glow discharge polymerization heat increase ion beam deposition ion etching ionization Kern layer magnetic field magnetron mask metal mTorr nitride oxide photoresist Phys planar plasma etching plating PM sputtering pm/min polishing polymer polymer deposition potential pressure Proc produce profile ratio RCA Rev reaction reactive reactive sputtering reactor reflected Semiconductors shown in Fig SiH4 silicon silicon nitride SiO2 solution species sputter deposition sputter etching Sputter Gun sputtering yield starting material stoichiometry substrate sufficient susceptor techniques Technol temperature thermal thickness thin film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York