Thin Film ProcessesRemarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Results 6-10 of 43
Page 18
John L. Vossen. Table 111 Miscellaneous Sputtering Yields Material Gas Energy (keV) Yield Reference Fe Ar 10 1.0 [32] Cu Ne 10 3.2 [34. 35] Cu Ar 10 6.25 [34, 35] Cu Kr 10 8.0 [35] Cu Xe 10 10.2 [35] Ag Ar 10 10.4 [361 Ag Kr 10 14.8 [36] ...
John L. Vossen. Table 111 Miscellaneous Sputtering Yields Material Gas Energy (keV) Yield Reference Fe Ar 10 1.0 [32] Cu Ne 10 3.2 [34. 35] Cu Ar 10 6.25 [34, 35] Cu Kr 10 8.0 [35] Cu Xe 10 10.2 [35] Ag Ar 10 10.4 [361 Ag Kr 10 14.8 [36] ...
Page 21
... sputter yield material until a steady state is reached. At steady state, the sputtered composition is that of the bulk target composition and the altered layer will recede uniformly with continued sputtering as long as the steady state ...
... sputter yield material until a steady state is reached. At steady state, the sputtered composition is that of the bulk target composition and the altered layer will recede uniformly with continued sputtering as long as the steady state ...
Page 22
John L. Vossen. 2. Yield The surface composition alteration generally assumes yields ... sputtering time was required to reach steady state for the 80°C target while ... yield ratios of Ni/ Cu of 1.9 at room temperature [88] to that of 1.6 [96] ...
John L. Vossen. 2. Yield The surface composition alteration generally assumes yields ... sputtering time was required to reach steady state for the 80°C target while ... yield ratios of Ni/ Cu of 1.9 at room temperature [88] to that of 1.6 [96] ...
Page 33
... sputtering of the target assembly itself, a ground shield is contoured around all surfaces at a distance less than ... yield of the target surface. For most metals, the secondary electron yield is initially high and then decreases as ...
... sputtering of the target assembly itself, a ground shield is contoured around all surfaces at a distance less than ... yield of the target surface. For most metals, the secondary electron yield is initially high and then decreases as ...
Page 43
... sputter etching, it is rarely possible to obtain an atomically clean substrate surface ... sputtering in 02 [111, 112, 210]. Clearly, this will not be adequate if ... yield of the materials involved [11, 212, 219]. Even at the lowest gas ...
... sputter etching, it is rarely possible to obtain an atomically clean substrate surface ... sputtering in 02 [111, 112, 210]. Clearly, this will not be adequate if ... yield of the materials involved [11, 212, 219]. Even at the lowest gas ...
Contents
9 | |
Chemical Methods of Film Deposition | 207 |
Physicalchemical Methods of Film Deposition | 333 |
Etching Processes | 399 |
Index | 557 |
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Common terms and phrases
A/min Abstr alloys anode Appl argon atoms cathode Chem chemical Chemical vapor deposition coatings composition compounds configuration current density deposition rate effect efficiency electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition first flow rate flux GaAs gas flow gases glow discharge polymerization heat increase ion beam deposition ion etching ionization Kern layer magnetic field magnetron mask metal mTorr nitride oxide photoresist Phys planar plasma etching plating PM sputtering pm/min polishing polymer polymer deposition potential pressure Proc produce profile ratio RCA Rev reaction reactive reactive sputtering reactor reflected Semiconductors shown in Fig SiH4 silicon silicon nitride SiO2 solution species sputter deposition sputter etching Sputter Gun sputtering yield starting material stoichiometry substrate sufficient susceptor techniques Technol temperature thermal thickness thin film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York