Thin Film ProcessesRemarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 13
... thin films. There are, in addition, other particles and radiation produced at the target, all of which may affect film properties (secondary electrons and ions, desorbed gases, x rays, and photons). The electrons and negative ions are ...
... thin films. There are, in addition, other particles and radiation produced at the target, all of which may affect film properties (secondary electrons and ions, desorbed gases, x rays, and photons). The electrons and negative ions are ...
Page 14
... thin films. ll. PHYSICAL AND CHEMICAL EFFECTS OF ION BOMBARDMENT ON SURFACES In sputter deposition, surfaces subject to ion bombardment are usually considered as the source of material from which films are grown. In addition to the ...
... thin films. ll. PHYSICAL AND CHEMICAL EFFECTS OF ION BOMBARDMENT ON SURFACES In sputter deposition, surfaces subject to ion bombardment are usually considered as the source of material from which films are grown. In addition to the ...
Page 46
... thin films (e.g., Fraser and Cook [253]). This implies that the pumping system used must be operated to obtain maximum pumping speed for the gases used. One must also be careful to ensure that no pressure gradients occur in the vicinity ...
... thin films (e.g., Fraser and Cook [253]). This implies that the pumping system used must be operated to obtain maximum pumping speed for the gases used. One must also be careful to ensure that no pressure gradients occur in the vicinity ...
Page 62
... thin films as desired. However, the sheer number of critical process parameters and their complex interrelationships can often make these processes difficult to control. For many applications, the advantages far outweigh the ...
... thin films as desired. However, the sheer number of critical process parameters and their complex interrelationships can often make these processes difficult to control. For many applications, the advantages far outweigh the ...
Page 67
... Thin Solid Films 32, 19 (1976). A. W. Mom's, Plat. Surf. Finish. 63(10), 42 (1976). C. Altman, Trans. Natl. Vac ... Film Technology." Thin Film Div., Am. Vac. Soc., New York, 1975. H. E. Farnsworth, R. E. Schlier, T. H. George. and R. M. ...
... Thin Solid Films 32, 19 (1976). A. W. Mom's, Plat. Surf. Finish. 63(10), 42 (1976). C. Altman, Trans. Natl. Vac ... Film Technology." Thin Film Div., Am. Vac. Soc., New York, 1975. H. E. Farnsworth, R. E. Schlier, T. H. George. and R. M. ...
Contents
9 | |
Chemical Methods of Film Deposition | 207 |
Physicalchemical Methods of Film Deposition | 333 |
Etching Processes | 399 |
Index | 557 |
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Common terms and phrases
A/min Abstr alloys anode Appl argon atoms cathode Chem chemical Chemical vapor deposition coatings composition compounds configuration current density deposition rate effect efficiency electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition first flow rate flux GaAs gas flow gases glow discharge polymerization heat increase ion beam deposition ion etching ionization Kern layer magnetic field magnetron mask metal mTorr nitride oxide photoresist Phys planar plasma etching plating PM sputtering pm/min polishing polymer polymer deposition potential pressure Proc produce profile ratio RCA Rev reaction reactive reactive sputtering reactor reflected Semiconductors shown in Fig SiH4 silicon silicon nitride SiO2 solution species sputter deposition sputter etching Sputter Gun sputtering yield starting material stoichiometry substrate sufficient susceptor techniques Technol temperature thermal thickness thin film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York